Field effect and photoelectronic property of nanodevices made from single Bi2S3 nanowire

Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

Volumn , Issue , 2006, Pages 1509-1512

  Yao, Kun ^a   Liang, Xuelei ^a   Chen, Qing ^a   Peng, Lianmao ^a  

^a Peking University   (China)

Author keywords

Bi2S3; Field effect; Nanowire; Photoelectronic

Indexed keywords

BISMUTH PLATING; MOLECULES;

FIELD EFFECTS; INTERNATIONAL CONFERENCES; MOLECULAR SYSTEMS; NANO-DEVICES; PROPERTY (S);

NEMS;

EID: 46149108337     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NEMS.2006.334818     Document Type: Conference Paper

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