Measurement of infant mortality rate in InGaP/GaAs heterojunction bipolar transistor technology

2006 ROCS Workshop - Reliability of Compound Semiconductors, Proceedings

Volumn , Issue , 2006, Pages 117-127

  Alt, K W ^a   Yeats, R E ^a   Hutchinson, C P ^a   Kuhn, D K ^a   Low, T S ^a   Iwamoto, M ^a   Adamski, M E ^a   Shimon, R L ^a   Shirley, T E ^a   Bonse, M ^a   Kellert, F G ^a   D'Avanzo, D C ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

(OTDR) TECHNOLOGY; COMPOUND SEMICONDUCTOR (CS); FAILURE RATES; HETERO JUNCTION; IN ORDER; INFANT MORTALITY; INFANT MORTALITY RATE (IMR); INGAP-GAAS; INGAP/GAAS HBT; PROCESS IMPROVEMENTS;

BIPOLAR TRANSISTORS; CRYSTALS; ELECTRIC CONDUCTIVITY; FAILURE ANALYSIS; HETEROJUNCTION BIPOLAR TRANSISTORS; NETWORKS (CIRCUITS); QUALITY ASSURANCE; RELIABILITY; SAFETY FACTOR; SEMICONDUCTOR MATERIALS;

TRANSISTORS;

EID: 46149105895     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ROCS.2006.323410     Document Type: Conference Paper

References (2)

1. Yuan Chen, Qing Wang. Kayali. A Statistical Approach to Characterizing the Reliability of Systems Utilizing HBT Devices, ROCS Workshop, 2004.
2. B. Eats, P. Chandler, M. Culver, D. D'Avanzo, G. Essilfie, C. Hutchinson, D. Kuhn, T. Low, T. Shirley, S. Thomas, W. Whiteley, Reliability of InGaP-Emitter HBTs, Mantech 2000, pp. 131-135.