Electronic properties of low-temperature thermoelectric materials: Selenium doped bismuth-antimony alloys

International Conference on Thermoelectrics, ICT, Proceedings

Volumn , Issue , 2006, Pages 488-491

  Koyano, M ^a   Hokaku, R ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANTIMONY; ANTIMONY ALLOYS; BISMUTH; BISMUTH ALLOYS; BISMUTH PLATING; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; MATERIALS PROPERTIES; NONMETALS; SELENIUM; SELENIUM COMPOUNDS; THERMOELECTRICITY;

(PL) PROPERTIES; CONDUCTION BAND EDGE (CBE); INTERNATIONAL CONFERENCES; POLY CRYSTALLINE;

ELECTRONIC PROPERTIES;

EID: 46149088985     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2006.331340     Document Type: Conference Paper

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