Thermoelectric transport properties of n-doped and p-doped Bi0.91Sb0.09 alloy thin films

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3655-3660

  Cho, Sunglae ^a   DiVenere, Antonio ^a   Wong, George K ^a,c   Ketterson, John B ^a   Meyer, Jerry R ^b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; FERMI LEVEL; HALL EFFECT; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING; THERMOELECTRICITY; THIN FILMS; TIN;

BISMUTH ANTIMONIDE;

SEMICONDUCTING FILMS;

EID: 0032614373     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369729     Document Type: Article

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