Coulomb and phonon scattering processes in metal-oxide-semiconductor inversion layers: Beyond Matthiessen's rule

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1682-1686

  Ishihara, Takamitsu ^a   Sano, Nobuyuki ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Coulomb scattering; Finite collisional duration; Matthiesen's rule; Phonon scattering

Indexed keywords

ELECTRIC FIELD EFFECTS; HAMILTONIANS; MATHEMATICAL OPERATORS; MATRIX ALGEBRA; PHONONS; RELAXATION PROCESSES;

COULOMB SCATTERING; FINITE COLLISIONAL DURATION; MATTHIESEN'S RULE; PHONON SCATTERING;

MOSFET DEVICES;

EID: 21244503517     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1682     Document Type: Article

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