Large tunneling magnetoresistance in a field-effect transistor with a nanoscale ferromagnetic gate

Applied Physics Letters

Volumn 92, Issue 25, 2008, Pages

  Bae, J U ^a   Lin, T Y ^a   Yoon, Y ^a   Kim, S J ^a   Imre, A ^b   Porod, W ^b   Reno, J L ^c   Bird, J P ^a  

^a University at Buffalo ^*  (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; EXCAVATION; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MAGNETS; MESFET DEVICES; MODULATION; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; TRANSISTORS; TUNNELING (EXCAVATION);

ELECTROSTATIC BARRIERS; FERROMAGNET; GATE VOLTAGES; IN-FIELD; MEMORY APPLICATIONS; NANO MAGNETS; NANO SCALING; NON-MAGNETIC; REPROGRAMMABLE; TUNNELING MAGNETORESISTANCE; TUNNELING REGIMES; UNIVERSAL LOGICS;

FIELD EFFECT TRANSISTORS;

EID: 46049087532     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2951901     Document Type: Article

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