Flat-surface, step-edge, facet-facet, and facet-step diffusion barriers in growth of a Pb mesa

Surface Science

Volumn 602, Issue 13, 2008, Pages 2284-2294

  Han, Yong ^a   Lu, Guang Hong ^b   Lee, Byeong Joo ^c   Liu, Feng ^a  

^a UNIVERSITY OF UTAH   (United States)

^b BEIHANG UNIVERSITY   (China)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Modified embedded atom method; Pb mesa growth; Surface diffusion barrier; Surface free energy

Indexed keywords

ADATOMS; ATOMIC PHYSICS; ATOMS; CALCULATIONS; CROSSINGS (PIPE AND CABLE); DIFFUSION; DIFFUSION BARRIERS; GROWTH KINETICS; LEAD; LEAD ALLOYS; MECHANISMS; SEMICONDUCTOR DOPING; SURFACE DIFFUSION; SURFACE PROPERTIES; SURFACES; TELECOMMUNICATION NETWORKS; TELEMETERING SYSTEMS;

(1 1 0) SURFACE; DIFFUSION MODES; ELSEVIER (CO); ENERGY PARAMETERS; EXCHANGE MECHANISMS; KINETIC GROWTH; MODIFIED EMBEDDED ATOM METHOD (MEAM); STEP DIFFUSION; STEP EDGES; SUBSTRATE ATOMS; SURFACE FREE-ENERGY (SFE);

MICROFLUIDICS;

EID: 45849146535     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.05.009     Document Type: Article

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