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Volumn 8, Issue 4, 2008, Pages 2151-2156

Large-scale synthesis and characterization of hexagonal prism-shaped SiC nanowires

Author keywords

Crystal growth; Nanowires; Raman spectroscopy; Silicon carbide; Vapor solid growth mechanism

Indexed keywords

(100) SILICON; ELECTRON MICROSCOPY (TEM AND SEM); FORMATION MECHANISMS; FOURIER; GRAPHITE CRUCIBLES; GRAPHITE SUBSTRATES; GROWTH MECHANISMS; HEXAGONAL CROSS SECTIONS; HEXAGONAL PRISMS; HIGH MAGNIFICATION; INFRARED (IR); LARGE-SCALE SYNTHESIS; SELECTED AREA ELECTRON DIFFRACTION (SAED); SIC NANOWIRES; SURFACE ENERGIES; VAPOR-SOLID (VS); X RAY DIFFRACTION (XRD);

EID: 45849144052     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.070     Document Type: Article
Times cited : (23)

References (25)
  • 21
    • 45849128555 scopus 로고    scopus 로고
    • G. Kirchschstein (ed.). Gemlin Handbook of Inorganic Chemistry, Si-Silicon Supplement. 8th edn. Springer, Berlin (1984), B2. p. 195.
    • G. Kirchschstein (ed.). Gemlin Handbook of Inorganic Chemistry, Si-Silicon Supplement. 8th edn. Springer, Berlin (1984), Vol. B2. p. 195.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.