|
Volumn 8, Issue 4, 2008, Pages 2151-2156
|
Large-scale synthesis and characterization of hexagonal prism-shaped SiC nanowires
|
Author keywords
Crystal growth; Nanowires; Raman spectroscopy; Silicon carbide; Vapor solid growth mechanism
|
Indexed keywords
(100) SILICON;
ELECTRON MICROSCOPY (TEM AND SEM);
FORMATION MECHANISMS;
FOURIER;
GRAPHITE CRUCIBLES;
GRAPHITE SUBSTRATES;
GROWTH MECHANISMS;
HEXAGONAL CROSS SECTIONS;
HEXAGONAL PRISMS;
HIGH MAGNIFICATION;
INFRARED (IR);
LARGE-SCALE SYNTHESIS;
SELECTED AREA ELECTRON DIFFRACTION (SAED);
SIC NANOWIRES;
SURFACE ENERGIES;
VAPOR-SOLID (VS);
X RAY DIFFRACTION (XRD);
ARCHITECTURAL ACOUSTICS;
AUGER ELECTRON SPECTROSCOPY;
CARBON;
DIFFRACTION;
ELECTRIC WIRE;
ELECTRON MICROSCOPY;
GRAPHITE;
INFRARED SPECTROSCOPY;
IRIDIUM;
MECHANISMS;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
NANOWIRES;
PRISMS;
SCANNING;
SILICON CARBIDE;
SPECTROSCOPIC ANALYSIS;
SPECTRUM ANALYSIS;
SURFACE CHEMISTRY;
SURFACE TENSION;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY ANALYSIS;
X RAY DIFFRACTION ANALYSIS;
INORGANIC COMPOUND;
NANOMATERIAL;
SILICON CARBIDE;
SILICON DERIVATIVE;
ARTICLE;
CHEMISTRY;
CONFORMATION;
CRYSTALLIZATION;
MACROMOLECULE;
MATERIALS TESTING;
METHODOLOGY;
NANOTECHNOLOGY;
PARTICLE SIZE;
SURFACE PROPERTY;
ULTRASTRUCTURE;
CARBON COMPOUNDS, INORGANIC;
CRYSTALLIZATION;
MACROMOLECULAR SUBSTANCES;
MATERIALS TESTING;
MOLECULAR CONFORMATION;
NANOSTRUCTURES;
NANOTECHNOLOGY;
PARTICLE SIZE;
SILICON COMPOUNDS;
SURFACE PROPERTIES;
|
EID: 45849144052
PISSN: 15334880
EISSN: None
Source Type: Journal
DOI: 10.1166/jnn.2008.070 Document Type: Article |
Times cited : (23)
|
References (25)
|