An IntenCD map of a reticle as a feed-forward input to DoseMapper

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Ben Yishai, Michael ^a   Finders, Jo ^b   Kazinczi, Robert ^b   Bleeker, Arno ^b   Luehrmann, Paul ^a   Janssen, Ingrid ^b   Duray, Frank ^b   Shoval, Lior ^a   Couderc, Christophe ^a   Piech, Rieh ^a   Hillel, Noam ^a   Englard, Ilan ^a  

^a APPLIED MATERIALS INC   (United States)

^b ASML   (Netherlands)

Author keywords

Aerial image; CD uniformity (CDU); Dose correction; DoseMapper; IntenCD; Mask; Process window; Reticle; Scanner

Indexed keywords

CADMIUM; CADMIUM COMPOUNDS; COMPUTER NETWORKS; MICROFLUIDICS; PHOTORESISTS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TECHNOLOGY;

(OTDR) TECHNOLOGY; ADVANCED LITHOGRAPHY; CD VARIATIONS; CRITICAL DIMENSION UNIFORMITY (CDU); FEED FORWARD (FF); MASK TECHNOLOGY; NEXT-GENERATION LITHOGRAPHY (NGL); PHOTO MASKING; PROCESS WINDOWS; SEMICONDUCTOR INDUSTRIES;

LITHOGRAPHY;

EID: 45549109301     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793124     Document Type: Conference Paper

References (6)

1. ITRS 2007 Lithography update
2. H.J Levinson, "Principle of lithography", vol. PM146, SPIE press, p.366, (2005)
3. Amir Sagiv et al, "IntenCD : Mask critical dimension variation mapping", Proc. 7028-49 BACUS, (2008).
4. Jo Finders et al, "Doble patterning for 32nm and below: an update", Proc. 6924-7 SPIE, (2008).
5. M. Dusa et al, "Pitch doubling through dual-patterning lithography challenges in integration and litho budgets; Pitch doubling through dual-patterning lithography challenges in integration and litho budgets", Proceedings of SPIE Vol. 6520, (2007)
6. Bert Vleeming et al "Sub-32nm half pitch imaging with high NA immersion exposure systems using Double Patterning technique", 4th International Symposium on Immersion Lithography, Keystone (2007)