Optical damage threshold of silicon for ultrafast infrared pulses

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6720, Issue , 2008, Pages

  Cowan, Benjamin M ^a,b  

^a TECH X CORPORATION   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Damage threshold; Infrared; Picosecond; Silicon; Ultrafast

Indexed keywords

LANTHANUM COMPOUNDS; LASER BEAMS; LASERS; NONMETALS; OPTICAL MATERIALS; PIGMENTS; PULSED LASER DEPOSITION; SILICON;

(100) SILICON; (P ,P ,T) MEASUREMENTS; 1550 NM; BREAKDOWN THRESHOLD; CRYSTALLINE SILICONS; EXPERIMENTAL SET UPS; HIGH-POWER LASERS; INFRARED PULSES; LASER-INDUCED DAMAGE; NEAR INFRA-RED (NIR); OPTICAL (PET) (OPET); OPTICAL DAMAGE THRESHOLDS; ULTRA-FAST; ULTRAFAST PULSES;

MEASUREMENTS;

EID: 45549087202     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.753720     Document Type: Conference Paper

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