Driving metallization dimensions to sub-30nm using immersion lithography and a self-aligned double patterning scheme

Advanced Metallization Conference (AMC)

Volumn , Issue , 2008, Pages 403-407

  Borst, Christopher ^a   Huli, Lior ^a   Bennett, Stephen ^a   Dai, Huixiong ^b   Bencher, Christopher ^b   Chen, Yongmei ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

193NM IMMERSION LITHOGRAPHIES; DOUBLE PATTERNING; ENGINEERING SOLUTIONS; HARD MASKS; IMMERSION LITHOGRAPHIES; IMMERSION SCANNERS; METALLIZATION; METALLIZATION TECHNIQUES; PATTERNING TECHNIQUES; PROCESS GEOMETRIES; RESIST PATTERNS; SELF-ALIGNED;

ACTIVE FILTERS; ETCHING; PHOTOLITHOGRAPHY; PHOTORESISTS;

METALLIZING;

EID: 55349142850     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. W. Jung et al., "Patterning with amorphous carbon spacer for expanding the resolution limit of current lithography tool", Proc. SPIE Vol. 6520, 65201C, (2007)
2. Hand, A., "Applied's Litho Scheme: Patterning vs. Printing", Semiconductor International, April 2007, 30 (4)