A novel parallel-field hall sensor with low offset and temperature drift based 2D integrated magnetometer

Sensors and Actuators, A: Physical

Volumn 115, Issue 2-3 SPEC. ISS., 2004, Pages 303-307

  Roumenin, Ch S ^a   Nikolov, D ^a   Ivanov, Avgust ^a  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

Hall microsensor; Multidimensional sensing; Parallel field Hall device

Indexed keywords

CARRIER MOBILITY; DEFLECTION (STRUCTURES); ELECTRIC POTENTIAL; HALL EFFECT; HEAT LOSSES; MAGNETIC FIELDS; MAGNETOMETERS; MICROSENSORS; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE; TEMPERATURE DISTRIBUTION; TRANSDUCERS;

HALL MICROSENSORS; MAGNETOSENSITIVITIES; MULTIDIMENSIONAL SENSING; PARALLEL-FIELD HALL DEVICE; TEMPERATURE DRIFT;

OPTICAL SENSORS;

EID: 4544381081     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.03.056     Document Type: Conference Paper

References (19)

1. P. Ripka, Magnetic Sensors and Magnetometers, Artech House Publication, Boston, USA, 2000.
2. H. Baltes, R. Castsagnetti, Magnetic sensors, in: S.M. Sze (Ed.), Semiconductor Sensors, Wiley, New York, 1994.
3. Ch. Roumenin, Solid State Magnetic Sensors, Amsterdam, Elsevier, 1994.
4. S. Middelhoek, S.A. Audet, Silicon Sensors, Academic Press, London, 1989.
5. R. Ernst, M. Hackner, H.-P. Hohne, Realising highly symmetric vertical Hall sensor elements on a standard CMOS process, in: Proceedings of the 16th European Conference on Solid-State Transducers, Prague, Czech Republic, pp. 595-597.
6. M. Hackner, H.-P. Hohne, R. Ernst, A very low offset Hall device in standard CMOS technology, in: Proceedings of the 16th European Conference on Solid-State Transducers, Prague, Czech Republic, pp. 598-599.
7. Muller-Schwanneke C., Jost F., Marx K., Lindenkreuz S., von Klitzing K. Offset reduction in silicon Hall sensors. Sens. Actuators. A81:2000;18-22.
8. Steiner R., Maier C., Mayer M., Bellekom S., Baltes H. Influence of mechanical stress on the offset voltage of Hall devices operated with spinning current method. J. Microelectrom. Sys. 8(4):1999;466-472.
9. Steiner R., Maier Ch., Haberli A., Steiner F.-P., Baltes H. Offset reduction in Hall devices by continuous spinning current method. Sens. Actuators A. 66:1998;167-172.
10. Roumenin Ch.S. Parallel-field Hall microsensors: an overview. Sens. Actuators A. 30:1992;77-87.
11. Mani R.G., von Klitzing K. Hall effect under null conditions. Appl. Phys. Lett. 64(10):1994;1262-1264.
12. Mani R.G., von Klitzing K. Temperature insensitive offset reduction in a Hall effect device. Appl. Phys. Lett. 64(23):1994;3121-3123.
13. Roumenin Ch.S. Parallel-field Hall microsensor. Compt. Rendus ABS. 40(11):1987;59-62.
14. Ch. Roumenin, D. Nikolov, A. Ivanov, A novel two-output parallel-field Hall microsensor with low offset and temperature drift, in: Proceedings of the 17th European Conference on Solid-State Transducers, Guimaraes, Portugal, 2003.
15. van der Pauw L.J. Messung des spezifischen Widerstandes und Hall-Koeffizienten an Scheibchen beliebiger Form. Philips Tech. Rundsch. 20:1958;230-236.
16. Ch. S. Roumenin, Hall-Effect Device, Bulgarian Patent No. 80103/10 June 1987.
17. Maenaka K., Ohgusu T., Ishida M., Nakamura T. Novel vertical Hall cells in standard bipolar technology. Electr. Lett. 23(21):1987;1104-1105.
18. Ch. Schott, R.S. Popovic, Integrated 3-D Hall magnetic field sensor, in: Proceedings of the Transducers '99, Sendai, Japan, 1999, vol. 1, pp. 168-171.
19. Roumenin Ch.S., Dimitrov K., Ivanov A. Integrated vector sensor and magnetic compass using a novel 3D Hall structure. Sens. Actuators A. 92:2001;119-122.