A z-axis differential capacitive SOI accelerometer with vertical comb electrodes

Sensors and Actuators, A: Physical

Volumn 116, Issue 3, 2004, Pages 378-383

  Tsuchiya, Toshiyuki ^a   Funabashi, Hirofumi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Accelerometer; Comb electrode; SOI; Vertical

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRODES; FABRICATION; MASKS; SENSITIVITY ANALYSIS; SENSORS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; VIBRATIONS (MECHANICAL);

ELECTROSTATIC FORCE; SILICON LAYERS; VERTICAL COMB ELETRODES; VIBRATION PROPERTIES;

ACCELEROMETERS;

EID: 4544373924     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.05.008     Document Type: Article

References (4)

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2. Matsumoto Y., Iwakiri M., Tanaka H., Ishida M., Nakamura T. A capacitive accelerometer using SDB-SOI structure. Sens. Actuators. A53:1996;267-272.
3. H. Xie, G.K. Fedder, in: Proceedings of the MEMS 2000 of A CMOS z-Axis Capacitive Accelerometer with Comb-Finger Sensing, pp. 496-501.
4. V. Milanovic, M. Last, K.S.J. Pister, Torsional Micromirrors with Lateral Actuators, in: Proceedings of the Transducers 2001, pp. 1298-1301.