Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 95-99

  Nguyen, Viet H ^a   Daamen, Roel ^a   Hoofman, Romano ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

CMP; Planarization

Indexed keywords

ABRASIVES; LITHOGRAPHY; METALLIZING; PARTICLES (PARTICULATE MATTER); PROCESS CONTROL; SLURRIES; SOLUTIONS;

COPPER WAFERS; PLANARIZATION; POLISHING PADS; REMOVAL RATE;

CHEMICAL MECHANICAL POLISHING;

EID: 4544328872     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.019     Document Type: Conference Paper

References (4)

1. J.M. Steigerwald, S.P. Murarka, R.J. Gutmann, in: Chemical Mechanical Planarization of Microelectronic Materials, Wiley, New York, 1997, p. 65.
2. S. Kondo, N. Sakuma, Y. Homma, Y. Goto, N. Ohashi, H. Yamaguchi, N. Owada, Complete abrasive free process for copper damascene interconnection, Proceedings of the International Interconnect Technology Conference (2000) 264-266.
3. V.H. Nguyen, A.J. Hof, H. van Kranenburg, P.H. Woerlee, F. Weimar, Copper chemical mechanical polishing using a slurry-free technique, Microelectronic Engineering 55 (2001) 305-312.
4. V.H. Nguyen, R. Daamen, P. van der Velden, F. Weimar, K. Smekalin, Hybrid CMP process for copper and ultra low-k materials integration, in: Advanced Metallization Conference 2003 book of abstracts, Montreal - Canada, 2123 October 2003, paper II.4.