Scanrom, a novel non-volatile memory cell storing 9 bits

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 74-75

  Rosmeulen, M ^a,b   Van Houdt, J ^a   Haspeslagh, L ^a   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; FLASH MEMORY; GATES (TRANSISTOR); LEAKAGE CURRENTS; LITHOGRAPHY;

CHARGE TRAPPING; DRAIN CURRENTS; DUAL GATE TRANSISTORS; NONVOLATILE MEMORY CELLS;

DATA STORAGE EQUIPMENT;

EID: 4544323187     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345401     Document Type: Conference Paper

References (4)

1. M. Bauer-et al., ISSCC Digest of Tech. Papers, p.132-133, 1995.
2. J. Van Houdt et al., Proceedings of the IEEE, vol.91, no.4, p.627-35, April 2003.
3. L. Breuil et al., IEEE Non- Volatile Semiconductor Memory Workshop 2003, p.46-47, February 2003.
4. J. Van Houdt et al., IEEE transactions on Electron Devices, vol.39, no.5, p.1150-1156, May 1992.