Lasing characteristics of InAs quantum-dot microdisk from 3 K to room temperature

Applied Physics Letters

Volumn 85, Issue 8, 2004, Pages 1326-1328

  Ide, Toshihide ^a   Baba, Toshihiko ^a   Tatebayashi, Jun ^b   Iwamoto, Satoshi ^b   Nakaoka, Toshihiro ^b   Arakawa, Yasuhiko ^b  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; CARRIER MOBILITY; MONOCHROMATORS; PHOTOLUMINESCENCE; PLASMA ETCHING; POLARIZATION; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SURFACE PROPERTIES; TEMPERATURE DISTRIBUTION;

LASING WAVELENGTH; MICRODISKS; PHOTOPUMPING; TEMPERATURE DEPENDENCE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 4544314802     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1787157     Document Type: Article

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