Ab initio pseudopotential calculations for the geometry and electronic structure of Si(1 1 4)-c(2 × 2)

Surface Science

Volumn 566-568, Issue 1-3 PART 2, 2004, Pages 895-899

  Smardon, R D ^a   Srivastava, G P ^a  

^a UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

Ab initio quantum chemical methods and calculations; High index single crystal surfaces; Silicon; Surface electronic phenomena (work function, surface potential, surface states, etc.); Surface structure, morphology, roughness, and topography

Indexed keywords

CHEMICAL BONDS; DEPOSITION; ELECTRONIC STRUCTURE; MOLECULAR STRUCTURE; QUANTUM THEORY; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE;

AB INITIO QUANTUM CHEMICAL METHOD AND CALCULATIONS; HIGH INDEX CRYSTAL SURFACES; SURFACE ELECTRONIC PHENOMENA;

SEMICONDUCTING SILICON;

EID: 4544306899     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.117     Document Type: Article

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