Formation of GaAs by annealing of two-layer Ga-As electrodeposits

Journal of Alloys and Compounds

Volumn 379, Issue 1-2, 2004, Pages 209-215

  Kozlov, Valentin M ^a,c   Bozzini, Benedetto ^b   Bicelli, Luisa Peraldo ^a  

^a CNR   (Italy)

^b INFM   (Italy)

^c Ukrainian State University of Science and Technologies   (Ukraine)

Author keywords

Amorphous arsenic; Diffusion coefficient; GaAs; Gallium

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; DIFFUSION; ELECTRODEPOSITION; ENERGY GAP; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; PHOTOVOLTAIC CELLS;

BAND GAPS; DIFFUSION COEFFICIENTS; ELECTRODEPOSITION SYSTEMS; TEFLON CELLS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4544294752     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.01.067     Document Type: Article

References (26)

1. Kozlov V.M., Agrigento V., Mussati G., Peraldo Bicelli L. J. Alloys Comp. 288:1999;255.
2. Kozlov V.M., Peraldo Bicelli L. J. Alloys Comp. 313:2000;161.
3. V.M. Kozlov, B. Bozzini, L. Peraldo Bicelli, J. Alloy Comp. 366 (2004) 152.
4. S. Chandra, Photoelectrochemical Solar Cells, Gordon and Breach, New York, 1985, vol. 5.
5. Khaselev O., Turner J.A. Science. 280:1998;425.
6. Zubeck I.V., Feigelson R.S., Huggins R.A., Petit P.A. J. Cryst. Growth. 34:1976;85.
7. De Mattei R.C., Elwell D., Feigelson R.S. J. Cryst. Growth. 43:1978;643.
8. Wicelinski S.P., Gale R.J. Proc. Electrochem. Soc. 86(1):1986;144.
9. Chum H.L., Koch V.R., Miller L.L., Osteryoung R.A. J. Am. Chem. Soc. 97:1975;3264.
10. Hussey C.L., King L.A., Wilkes J.S. J. Electroanal. Chem. 102:1979;321.
11. Wicelinski S.P., Gale R.J., Wilkes J.S. J. Electrochem. Soc. 134:1987;262.
12. M.W. Verbrugge, M.K. Carpenter, US Patent 4,883,567 (1989).
13. Perrault G.G. J. Electrochem. Soc. 136:1989;2845.
14. Menzies I.A., Owen L.W. Electrochim. Acta. 11:1966;251.
15. Yang M.-C., Landau U., Angus J.C. J. Electrochem. Soc. 139:1992;3480.
16. Mengoli G., Musiani M.M., Paolucci F. J. Electroanal. Chem. 332:1992;199.
17. Andreoli P., Cattarin S., Musiani M.M., Paolucci F. J. Electroanal. Chem. 385:1995;265.
18. Villegas I., Stickney J.L. J. Electrochem. Soc. 139:1992;686.
19. T.B. Massalski, Binary Alloy Phase Diagrams, American Society for Metals, Metals Park, OH, 1986-1987, vol. 1, p. 200 (Ga-As); p. 206 (In-As); vol. 2, p. 1157 (Ga-Sb); p. 1391 (In-Sb).
20. ASTM Cards: 5-601, 1974 (orthorhombic Ga) 5-0632, 1974 (rhombohedral As) 30-100, 1988 (orthorhombic As) 32-389, 1990 (GaAs) 6-0696, 1967 (Fe).
21. Canegallo S., Demeneopoulos V., Peraldo Bicelli L., Serravalle G. J. Alloys Comp. 228:1995;23.
22. Kozlov V.M., Agrigento V., Bontempi D., Canegallo S., Moraitou C., Toussimi A., Peraldo Bicelli L., Serravalle G. J. Alloys Comp. 259:1997;234.
23. H. Schmalzried, in: Solid State Reactions, Academic Press, New York, 1974, pp. 53-66, 95-97, 124-127.
24. Wagman D.D., Evans V.H., Parker V.B., Schumm R.H., Halow I., Bailey S.M., Churney K.L., Nuttall R.L. J. Phys. Chem. Ref. Data. 11(Suppl. 2):1982;2-132.
25. V.M. Kozlov, B. Bozzini, V. Licitra, M.A. Lovera, L. Peraldo Bicelli, J. Non-equil. Processing, in press.
26. C.A. Coulson, Valence, second ed., Oxford University, Oxford, 1961, p. 139.