Influence of temperature and of structure of antimony substrate on gallium diffusion into the GaSb semiconductor compound

Journal of Alloys and Compounds

Volumn 313, Issue 1-2, 2000, Pages 161-167

  Kozlov, Valentin M ^a   Peraldo Bicelli, Luisa ^a  

^a Dipto Chim Fis Applicata P   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANTIMONY; ELECTRODEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; INTERDIFFUSION (SOLIDS); MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS ANTIMONY; CRYSTALLINE ANTIMONY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034501774     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(00)01032-X     Document Type: Article

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