Physically based simulation of strong charge multiplication events in power devices triggered by incident ions

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 257-260

  Kaindl, W ^a   Solkner G ^b   Becker, H W ^c   Meijer, J ^c   Schulze, H J ^b   Wachutka, G ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COSMIC RAYS; ELECTRIC FIELDS; KRYPTON; PARAMETER ESTIMATION; PROBABILITY; SEMICONDUCTING SILICON;

CHARGE MULTIPLICATION; ION IRRADIATION; NUCLEAR REACTION PROCESSES; RADIATION SENSITIVITY;

SEMICONDUCTOR DEVICES;

EID: 4544260253     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.239974     Document Type: Conference Paper

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