Kinetics of tin segregation on crystalline semiconductor surfaces: Effect of the defects induced by ion bombardment

Surface Science

Volumn 566-568, Issue 1-3 PART 2, 2004, Pages 1163-1167

  Rolland, A ^a   Bernardini, J ^a   Moya, G ^a   Girardeaux, C ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Auger electron spectroscopy; Diffusion and migration; Germanium; Models of surface kinetics; Surface segregation; Tin

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEFECTS; DIFFUSION; ION BOMBARDMENT; REACTION KINETICS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GERMANIUM; SEMICONDUCTOR MATERIALS; SPUTTERING; TIN COMPOUNDS;

METALLIC SOLID SOLUTIONS; MIGRATION; MODELS OF SURFACE KINETICS; SURFACE SEGREGATION;

CRYSTALLINE MATERIALS;

EID: 4544246050     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.077     Document Type: Article

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