Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 99-102

  Sadoh, T ^a   Nagatomo, K ^a   Tsunoda, I ^a   Kenjo, A ^a   Enokida, T ^b   Miyao, M ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b Fukuryo Semicon Engineering Corporation   (Japan)

Author keywords

Crystal nucleation; Ge doping; Poly Si; Poly SiGe; Solid phase crystallization; Thin film transistor

Indexed keywords

ACTIVATION ENERGY; DEPOSITION; DIFFUSION; DOPING (ADDITIVES); GERMANIUM; INTERFACES (MATERIALS); MOLECULAR STRUCTURE; NUCLEATION; SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS;

CRYSTAL NUCLEATION; GE-DOPING; SOLID-PHASE CRYSTALLIZATION; THERMAL GROWTH;

POLYCRYSTALLINE MATERIALS;

EID: 4544238690     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.010     Document Type: Article

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