Ion beam induced charge imaging of epitaxial GaN detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 531, Issue 1-2, 2004, Pages 82-86

  Sellin, P J ^a   Hoxley, D ^a   Lohstroh, A ^a   Simon, A ^a,d   Cunningham, W ^b   Rahman, M ^b   Vaitkus, J ^c   Gaubas, E ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c VILNIUS UNIVERSITY   (Lithuania)

^d INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

Author keywords

Gallium nitride; Ion beam induced charge imaging; Radiation detector

Indexed keywords

CAPACITANCE; ELECTRIC FIELDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; IMAGING TECHNIQUES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMETER ESTIMATION; POLYCRYSTALLINE MATERIALS; RADIATION DETECTORS; SIGNAL PROCESSING; VOLTAGE MEASUREMENT;

CAPACITANCE METERS; CHARGE SIGNAL AMPLITUDES; ION BEAM INDUCED CHARGE (IBIC) IMAGING; SCHOTTKY CONTACTS;

ION BEAMS;

EID: 4544235908     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2004.05.078     Document Type: Conference Paper

References (3)

1. Wang T., Shirahama T., Sun H.B., Wang H.X., Bai J., Sakai S., Misawa H. Appl. Phys. Lett. 76:2000;2220.
2. Vaitkus J., Cunningham W., Gaubas E., Rahman M., Sakai S., Smith K.M., Wang T. Nucl. Instr. and Meth. A. 509:2003;60.
3. Sellin P.J., Breese M.B., Galbiati A., Maghrabi M., Townsend P.D. Nucl. Instr. and Meth. A. 487:2002;65.