Impact of improved mobilities and suppressed 1/f noise in fully depleted SOI MOSFETs fabricated on Si(110) surface

ECS Transactions

Volumn 6, Issue 4, 2007, Pages 101-106

  Cheng, W ^a   Teramoto, A ^a   Tye, C ^a   Gaubert, P ^a   Hirayama, M ^a   Sugawa, S ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ELECTRONS; HYDROFLUORIC ACID; MOSFET DEVICES; SILICON COMPOUNDS; SURFACE ROUGHNESS;

1/F NOISE; ACCUMULATION MODES; CHEMICAL SURFACES; EFFECTIVE FIELD; EFFECTIVE MOBILITIES; FULLY DEPLETED SOI; LIGHT ILLUMINATION; MICRO-ROUGHNESS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 45249112584     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728847     Document Type: Conference Paper

References (9)

1. J. Colinge: IEEE Trans. Electron Devices. Vol. 45, No. 5, pp. 1010 (1998).
2. T. Sato, Y. Takeishi and H. Hara. Phys Rev B. Vol 4, No. 6, pp. 1950 (1971).
3. A. Teramoto, T Hamada, H. Akahori, K. Nil, T. Suwa, K. Kotani, M. Hirayama, S. Sugawa and T. Ohmi: IEDM Tech Dig., pp 801 (2003).
4. T. Mizuno, N Sugiyama, T. Tezuka, T. Numata, T. Maeda, S. Takagi IEEE Trans. Electron Devices. Vol. 51, No. 7, pp. 1114 (2004).
5. W. Cheng, A. Teramoto, M. Hirayama, S. Sugawa and T. Ohmi. Jpn J Appl Phys. Vol. 45, pp. 3110 (2006)
6. T Ohmi' J Electronchem Soc., Vol 143, No. 9, pp 2957 (1996).
7. H. Morinaga, K. Shimaoka, and T. Ohmi J Electronchem Soc, Vol. 153, No. 7, pp. G626 (2006).
8. T. Ohmi, M. Hirayama and A. Teramoto' J Phy. D: Appl. Phys Vol. 39, R1 (2006).
9. S. Takagi, A. Toriumi, M. Iwase, H. Tango: IEEE Trans. Electron Devices Vol. 41, No. 12, pp. 2357 (1994)