Hot carrier instability mechanism in accumulation-mode normally-off SOI nMOSFETs and their reliability advantage

ECS Transactions

Volumn 6, Issue 4, 2007, Pages 113-118

  Kuroda, R ^a,b   Teramoto, A ^a   Cheng, W ^a   Sugawa, S ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JSPS

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC BREAKDOWN; HOT CARRIERS; IMPACT IONIZATION; INTERFACE STATES; SILICON ON INSULATOR TECHNOLOGY;

CHANNEL HOT ELECTRON; DEGRADATION MECHANISM; DOPANT CONCENTRATIONS; EXPERIMENTAL EXAMINATION; HOT-CARRIER INSTABILITY; RELIABILITY ADVANTAGES; TRANSFER CHARACTERISTICS; TRANSISTOR OPERATION;

MOSFET DEVICES;

EID: 45249106627     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728849     Document Type: Conference Paper

References (7)

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