Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source

Optics Express

Volumn 16, Issue 12, 2008, Pages 8780-8791

  El Kurdi, M ^a   Checoury, X ^a   David, S ^a   Ngo, T P ^a   Zerounian, N ^a   Boucaud, P ^a   Kermarrec, O ^b   Campidelli, Y ^b   Bensahel, D ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; PHOTOLUMINESCENCE; THERMOANALYSIS;

CARRIER RECOMBINATION DYNAMICS; FREE CARRIER ABSORPTION; NON-RADIATIVE RECOMBINATIONS; PHOTOGENERATED CARRIERS; PHOTOLUMINESCENCE MEASUREMENTS; SELF-ASSEMBLED ISLANDS; SILICON BASED PHOTONICS; SURFACE RECOMBINATION VELOCITIES;

PHOTONIC CRYSTALS;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; COMPUTER SIMULATION; CRYSTALLIZATION; ILLUMINATION; LIGHT; METHODOLOGY; NANOTECHNOLOGY; RADIATION SCATTERING; THEORETICAL MODEL;

COMPUTER SIMULATION; CRYSTALLIZATION; LIGHT; LIGHTING; MODELS, THEORETICAL; NANOSTRUCTURES; NANOTECHNOLOGY; SCATTERING, RADIATION; SILICON;

EID: 45249103266     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.008780     Document Type: Article

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