Birefringence and optical power confinement in horizontal multi-slot waveguides made of Si and SiO2

Optics Express

Volumn 16, Issue 12, 2008, Pages 8623-8628

  Yoo, Han G ^a   Fu, Yijing ^b   Riley, Daniel ^c   Shin, Jung H ^d   Fauchet, Philippe M ^a,b,c  

^a UNIVERSITY OF ROCHESTER   (United States)

^b UNIVERSITY OF ROCHESTER   (United States)

^c University of Rochester   (United States)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE; REFRACTIVE INDEX; SILICON; WAVEGUIDES;

ALTERNATING LAYERS; LARGE BIREFRINGENCE; LAYER THICKNESS RATIO; LOW REFRACTIVE INDEX; REFRACTIVE INDEX DIFFERENCES; SIMULATIONS AND MEASUREMENTS; THIN FILM WAVEGUIDES; WAVEGUIDE THICKNESS;

TRANSFER MATRIX METHOD;

SILICON; SILICON DIOXIDE;

ARTICLE; BIREFRINGENCE; CHEMISTRY; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; METHODOLOGY; OPTICS; RADIATION SCATTERING; REFRACTOMETRY; THEORETICAL MODEL; TRANSDUCER;

BIREFRINGENCE; COMPUTER SIMULATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; MODELS, THEORETICAL; OPTICS; REFRACTOMETRY; SCATTERING, RADIATION; SILICON; SILICON DIOXIDE; TRANSDUCERS;

EID: 45249101070     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.008623     Document Type: Article

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