Carrier-transport-enhanced CMOS using new channel materials and structures

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Takagi, Shinichi ^a,b   Irisawa, Toshifumi ^c   Tezuka, Tsutomu ^c   Nakaharai, Shu ^c   Usuda, Koji ^c   Hirashita, Norio ^c   Takenaka, Mitsuru ^b   Sugiyama, Naoharu ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c MIRAI ASET ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44949250926     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422466     Document Type: Conference Paper

References (7)

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2. T. Tezuka, S. Nakaharai, Y. Moriyama, N. Hirashita, E. Toyoda, T. Numata, T. Irisawa, K. Usuda, N. Sugiyama, T. Mizuno and S. Takagi, Semicond. Sci. Technol., 22 (2007) p. S93
3. T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita, N. Sugiyama, E. Toyoda and S. Takagi, VLSI symp. (2005) p. 178
4. T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita, N. Sugiyama, E. Toyoda and S. Takagi, IEEE Trans. Electron Devices, 53 (2006) p. 2809
5. T. Irisawa, T. Numata, T. Tezuka, K. Usuda, S. Nakaharai, N. Hirashita, N. Sugiyama, E. Toyoda and S. Takagi, IEDM (2005) p. 727
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7. K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, IEDM (2005) p. 135