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Volumn 602, Issue 12, 2008, Pages 2009-2016
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Reactions of disilane with the deuterium-terminated Ge(1 0 0) 2 × 1 surface
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Author keywords
Disilane; Molecule solid reactions; Raman scattering spectroscopy; Semiconducting surfaces; Silicon germanium; Single crystal surfaces; Surface passivation; Thermal desorption spectroscopy
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Indexed keywords
DEUTERIUM COMPOUNDS;
MOLECULAR STRUCTURE;
RAMAN SPECTROSCOPY;
TEMPERATURE PROGRAMMED DESORPTION;
GERMANIUM MONODEUTERIDE;
MOLECULAR DISILANE;
SURFACE PASSIVATION;
GERMANIUM COMPOUNDS;
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EID: 44949233696
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2008.03.028 Document Type: Article |
Times cited : (1)
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References (31)
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