메뉴 건너뛰기




Volumn 602, Issue 12, 2008, Pages 2009-2016

Reactions of disilane with the deuterium-terminated Ge(1 0 0) 2 × 1 surface

Author keywords

Disilane; Molecule solid reactions; Raman scattering spectroscopy; Semiconducting surfaces; Silicon germanium; Single crystal surfaces; Surface passivation; Thermal desorption spectroscopy

Indexed keywords

DEUTERIUM COMPOUNDS; MOLECULAR STRUCTURE; RAMAN SPECTROSCOPY; TEMPERATURE PROGRAMMED DESORPTION;

EID: 44949233696     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.03.028     Document Type: Article
Times cited : (1)

References (31)
  • 3
    • 44949177131 scopus 로고    scopus 로고
    • See for example: Proc. 3rd Int. Symp. on Si-MBE, Strasbourg, France. Thin Solid Films, 183 (1989).
    • See for example: Proc. 3rd Int. Symp. on Si-MBE, Strasbourg, France. Thin Solid Films, 183 (1989).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.