High linearity-wideband PHEMT Darlington amplifier with +40 dBm IP3

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 2, Issue , 2006, Pages 1035-1038

  Kobayashi, Kevin W ^a  

^a Sirenza Microdevices   (United States)

Author keywords

Darlington; E mode; ED PHEMT; IP3 bandwidth; Self bias; Wideband

Indexed keywords

ASIA PACIFIC; CONFERENCE PROCEEDINGS; DARLINGTON; GHZ BAND; HIGH LINEARITY; JUNCTION TEMPERATURES; TOTAL CURRENT; WIDE BANDS;

AMPLIFIERS (ELECTRONIC); ENERGY GAP; FEEDBACK AMPLIFIERS; MICROWAVES;

BROADBAND AMPLIFIERS;

EID: 44949157705     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2006.4429586     Document Type: Conference Paper

References (6)

1. Sirenza Microdevices, " 50 - 850 MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier," SBB1089 datasheet, www.sirenza.com.
2. Sirenza Microdevices, "Standard 5V Medium Power InGaP Darlington Amplifiers," Microwave Journal, vol. 48, no.5, may 2005, pg. 164.
3. K.W. Kobayashi, "Improved efficiency, IP3-Bandwidth and Robustness of a Microwave Darlington Amplifier using 0.5um ED PHEMT and a New Circuit Topology," 2005 IEEE Compound Semiconductor
4. Kobayashi, K.W., US Patent No. 6,927,634 "Self-Biased Darlington Amplifier," August 9, 2005, assignee Sirenza Microdevices.
5. Kobayashi, K.W., Gittemeier, T., "Darlington Gain Blocks Eliminate Bias Resistor," Microwavse & RF Journal, January, 2006, pg. 70-75.
6. Wohlmuth, W.A.; Liebl, W.; Juneja, V.; Hallgren, R.; Struble, W.; Farias, D.; Litzenberg, P.; Berger, O., E-/D-pHEMT technology for wireless components," IEEE Compound Semiconductor Integrated Circuit Symposium, Monterey, California, Oct. 2004, Pages: 115-118.