Improved efficiency, IPS-bandwidth and robustness of a microwave darlington amplifier using 0.5um ED PHEMT and a new circuit topology

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2005, Pages 93-96

  Kobayashi, Kevin W ^a  

^a Sirenza Microdevices   (United States)

Author keywords

Darlington; E mode; ED PHEMT; IP3 bandwidth; Self bias; Wideband

Indexed keywords

DARLINGTON AMPLIFIER; E-MODE; IP3-BANDWIDTH; SELF-BIAS;

BANDWIDTH; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POTENTIAL; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; ROBUSTNESS (CONTROL SYSTEMS); SEMICONDUCTING INDIUM COMPOUNDS;

POWER AMPLIFIERS;

EID: 30944460541     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Kobayashi, K.W., US Patent No. 6,927,634 "Self-Biased Darlington Amplifier," August 9, 2005, assignee Sirenza Microdevices.
2. Wohlmuth, W.A.; Liebl, W.; Juneja, V.; Hallgren, R.; Struble, W.; Parias, D.; Litzenberg, P.; Berger, O., "E-/D-pHEMT technology for wireless components," IEEE Compound Semiconductor Integrated Circuit Symposium, Monterey, California, Oct. 2004, Pages: 115-118.
3. Sirenza Microdevices, "Standard 5V Medium Power InGaP Darlington Amplifiers," Microwave Journal, vol. 48, no.5, may 2005, pg. 164.