Poly-silicon quantum dot single electron transistors

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Kang, Kwon Chil ^a   Kang, Sangwoo ^a   Yang, Hong Sun ^a   Song, Seung Hwan ^a   Kim, Jinho ^a   Lee, Jong Duk ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRONS; NONMETALS; OPTICAL WAVEGUIDES; POLYSILICON; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON; TRANSIENTS; TRANSISTORS;

(1 1 0) SURFACE; (100) SILICON; COULOMB OSCILLATIONS; FABRICATION METHODS; INTERNATIONAL (CO); QUANTUM DOT (CO); REPRODUCIBILITY; ROOM TEMPERATURE OPERATION; ROOM-TEMPERATURE (RT); SELF ALIGNED (SA); SILICON-NANOWIRE; SINGLE ELECTRON TRANSISTOR (SSET);

SEMICONDUCTOR QUANTUM DOTS;

EID: 44949138482     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422255     Document Type: Conference Paper

References (4)

1. Dae Hwan Kim et al., International Electron Devices Meeting, 2001
2. M. Saitoh, T. Hiramoto, International Electron Devices Meeting, 2003
3. K. K. Likharev, "Single-electron devices and their applications," Proc. IEEE, vol. 87, no. 4, pp. 606-632, Apr. 1999.
4. Yeo, Kyoung Hwan et al., International Electron Devices Meeting , 2006