SRAM critical yield evaluation based on comprehensive physical / statistical modeling, considering anomalous non-Gaussian intrinsic transistor fluctuations

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 22-23

  Miyamura, M ^a   Fukai, T ^b   Ikezawa, T ^a   Ueno, R ^a   Takeuchi, K ^a   Hane, M ^a  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Fluctuation; Simulation; SRAM; Statistical; Variation

Indexed keywords

CIRCUIT SIMULATION; GAUSSIAN NOISE (ELECTRONIC); MODELS; OPTIMIZATION; STATIC RANDOM ACCESS STORAGE; STATISTICAL METHODS; TRELLIS CODES;

65-NM NODES; GA TE LENGTHS; MONTE CARLO (MC); MOSFETS; NON-GAUSSIAN; PHYSICAL MODEL (PM); ROBUST DESIGNS; STATISTICAL ANALYSIS (IGC: E4/K7); STATISTICAL MODELLING; TCAD SIMULATIONS; VLSI TECHNOLOGIES; YIELD LOSSES;

ELECTRICAL ENGINEERING;

EID: 44949096075     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339711     Document Type: Conference Paper

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