A mixed-signal readout chip for a 7-cell Si-drift detector in 0.35-μm BiCMOS technology

ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

Volumn , Issue , 2007, Pages 296-299

  Diehl, Inge ^a   Hansen, Karsten ^a   Reckleben, Christian ^a  

^a DESY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; COMPUTER NETWORKS; DETECTORS; EQUIVALENT CIRCUITS; MICROFLUIDICS; NETWORKS (CIRCUITS); SILICON; SPECTRUM ANALYSIS; TECHNOLOGY; X RAY SPECTROSCOPY;

(OTDR) TECHNOLOGY; COUNT RATES; DYNAMIC RANGE (DR); EUROPEAN; INPUT PULSES; MIXED SIGNALS; NOISE VOLTAGE; NONLINEARITY (INCLUDING BIFURCATION THEORY); PHOTON ENERGIES; SI DRIFT DETECTORS; SOLID-STATE CIRCUITS CONFERENCE; X RAY SPECTROSCOPY;

BICMOS TECHNOLOGY;

EID: 44849087211     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2007.4430302     Document Type: Conference Paper

References (3)

1. P. Lechner, C. Fiorini, R. Hartmann, J. Kemmer, N. Krause, P. Leutenegger, A. Longoni, H. Soltau, D. Stötter, L. Strüder, and U. Weber, "Silicon drift detectors for high count rate X-ray spectroscopy at room temperature," Nucl Instrum. Methods, vol. A 458, pp. 281-287, February 2001.
2. K. Hansen, and C. Reckleben, "Spectral Peak Shift of Si-Drift Detectors With Integrated JFETs," IEEE Trans. Nucl. Sci., vol. 51, pp. 1283-1288, June 2004.
3. K. Hansen, M. Reinecke, H. Klär and M. Benca, "High-Speed High-Resolution Signal Processing for Multicell Silicon Drift Detectors," IEEE Trans. Nucl. Sci, vol. 49, pp. 541-547, April 2002.