Direct electron beam patterning and molecular beam epitaxy growth of InAs: Site definition of quantum dots

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1097-1099

  Yokota, H ^a   Tsunashima, K ^a   Iizuka, K ^a   Okamoto, H ^a  

^a NIPPON INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OXIDE FILMS; SEMICONDUCTOR QUANTUM DOTS;

DIRECT ELECTRON BEAM PATTERNING; SEMICONDUCTOR CRYSTAL SURFACE; SUBMICROMETER PROTRUSIONS; WAFER SURFACES;

INDIUM COMPOUNDS;

EID: 44649118545     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2839675     Document Type: Article

References (4)

1. Japanese Patent No. 3763021 (27 January 2006).
2. S. Ohkouchi, Y. Nakamura, H. Nakamura, and K. Asakawa, Jpn. J. Appl. Phys., Part 1 44, 5777 (2005).
3. S. Kiravittaya, A. Rastelli, and O. G. Schmidt, Appl. Phys. Lett. 87, 243112 (2005).
4. Japanese Patent Application No. 2007-173751 (5 July 2007).