Rapid growth and photoluminescence properties of doped ZnS one-dimensional nanostructures

Journal of Crystal Growth

Volumn 310, Issue 13, 2008, Pages 3240-3246

  Zhuo, R F ^a   Feng, H T ^a   Yan, D ^a   Chen, J T ^a   Feng, J J ^a   Liu, J Z ^a   Yan, P X ^a,b  

^a LANZHOU UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

A1. Low dimensional structures; A1. Photoluminescence properties; A3. Chemical vapor deposition; B1. ZnS; B2. Semiconducting materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GRAPHITE; GROWTH (MATERIALS); GROWTH TEMPERATURE; LIGHT EMISSION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; ZINC SULFIDE;

ALUMINUM OXIDE; LOW-DIMENSIONAL STRUCTURES; PHOTOLUMINESCENCE PROPERTIES; RAPID GROWTH;

NANOSTRUCTURES;

EID: 44549084503     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.03.028     Document Type: Article

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