Hydrogen implantation effects on the electrical and optical properties of metal nitride thin films

Materials Transactions

Volumn 43, Issue 5, 2002, Pages 1138-1141

  Ishikawa, Tsutomu ^a   Masuda, Masataka ^a   Hayashi, Yasunori ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Aluminum nitride; Copper nitride; Low energy hydrogen ion implantation; Non stoichiometry; Reactive sputtering; Stoichiometry

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY; ENERGY GAP; ION IMPLANTATION; IRRADIATION; NITRIDES; OPTICAL PROPERTIES; STOICHIOMETRY; THIN FILMS;

HYDROGEN IMPLANTATION;

HYDROGEN;

EID: 0036577185     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.43.1138     Document Type: Article

References (11)

1. A method of measuring the resistivity and hall coefficient on lamellae of arbitary shape