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Volumn 2, Issue , 2004, Pages 891-894

Output power capability of class-E amplifiers with nonlinear shunt capacitance

Author keywords

MOSFET power amplifiers; Power MOSFETs; Semiconductor device modeling

Indexed keywords

CLASS-E AMPLIFIERS; POWER MOS-FET; SEMICONDUCTOR DEVICE MODELING; SHUNT CAPACITANCE;

EID: 4444318195     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (10)

References (9)
  • 1
    • 0016521160 scopus 로고
    • Class E -a new class of high-efficiency tuned single-ended switching power amplifiers
    • June
    • N. O. Sokal and A. D. Sokal, "Class E -a new class of high-efficiency tuned single-ended switching power amplifiers," IEEE Journal on Solid State Circuits, vol. SC-10, No. 3, pp. 168-176, June 1975.
    • (1975) IEEE Journal on Solid State Circuits , vol.SC-10 , Issue.3 , pp. 168-176
    • Sokal, N.O.1    Sokal, A.D.2
  • 3
    • 0042344369 scopus 로고
    • Power transistor output port model
    • June
    • N. O. Sokal and R. Redl, "Power transistor output port model," RF Design, vol. 10, no. 6, pp. 45-48, 50, 51 and 53, June 1987.
    • (1987) RF Design , vol.10 , Issue.6 , pp. 45-48
    • Sokal, N.O.1    Redl, R.2
  • 6
    • 0033358849 scopus 로고    scopus 로고
    • Frequency limitation of a high-efficiency class E tuned power amplifier due to a shunt capacitance
    • June
    • A. Mediano and P. Molina, "Frequency limitation of a high-efficiency class E tuned power amplifier due to a shunt capacitance," Proceedings of the IEEE MTT-S International Microwave Symposium, pp. 363-366, June 1999.
    • (1999) Proceedings of the IEEE MTT-S International Microwave Symposium , pp. 363-366
    • Mediano, A.1    Molina, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.