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Volumn 46, Issue 2, 1999, Pages 114-119

Design of class E power amplifier with nonlinear parasitic output capacitance

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; MOS DEVICES; SEMICONDUCTOR JUNCTIONS;

EID: 0033077643     PISSN: 10577130     EISSN: None     Source Type: Journal    
DOI: 10.1109/82.752911     Document Type: Article
Times cited : (66)

References (9)
  • 5
    • 33749693019 scopus 로고    scopus 로고
    • in High-Speed Semiconductor Devices, S. M. Sze, Ed. New York: Wiley Interscience, 1990, ch. 3.
    • J. R. Brews, "The submicron MOSFET," in High-Speed Semiconductor Devices, S. M. Sze, Ed. New York: Wiley Interscience, 1990, ch. 3.
    • "The Submicron MOSFET,"
    • Brews, J.R.1
  • 6
    • 33749698236 scopus 로고    scopus 로고
    • Information Sciences Institute, Marina Del Rey, CA. See www.mosis.org for technical information including extracted SPICE parameters on CMOS fabrication runs.
    • Information Sciences Institute, Marina Del Rey, CA. See www.mosis.org for technical information including extracted SPICE parameters on CMOS fabrication runs.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.