1-Watt Ku-band power amplifier MMICs using low-cost Quad-Flat Plastic package

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2004, Pages 473-476

  Bessemoulin, A ^a   Parisot, M ^a   Camiade, M ^a  

^a U Monolithic Semiconductors SAS   (France)

Author keywords

High Power Amplifier MMIC; Millimeter wave; Packaging

Indexed keywords

EPOXY ADHESIVES; HIGH POWER AMPLIFIERS; QUAD FLAT PLASTIC PACKAGE (QFN); SURFACE MOUNT DEVICE (SMD);

CURRENT VOLTAGE CHARACTERISTICS; HEAT RESISTANCE; MILLIMETER WAVE DEVICES; PACKAGING; PLASTICS; POWER AMPLIFIERS; SILICON NITRIDE; SURFACE MOUNT TECHNOLOGY;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 4444317551     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. K. Beilenhoff, A. Bessemoulin, P. Quentin, S. Tranchant, O. Vaudescal, M. Parisot, H. Daembkes, "Full 26-GHz MMIC Chipset for Telecom Applications in SMD-Type Packages", in Proc. of the Gallium Arsenide & Other Semiconductors Application Symposium (GAAS 2002), pp. 331-334, Milan, Italy. September 2002.
2. A. Bessemoulin, J. Dishong, G. Clark, D. White, P. Quentin, H. Thomas, D. Geiger, "1-Watt Broad Ka-band Ultra Small High Power Amplifier MMICs Using 0.25-μm GaAs PHEMTs", 2002 IEEE GaAs IC Symposium, pp.40-43. Monterey, CA-USA. October 2002.
3. US Patent Number 6,081,006, S.R. Nelson, "Reduced Size Field Effect Transistor", June 27, 2000.
4. Cha6042-99F, product datasheet, United Monolithic Semiconductors, http://www.ums-gaas.com/, Oct. 2002.