The contribution of the amorphous phase in nanocrystalline thin films of germanium and gallium arsenide

Surface and Interface Analysis

Volumn 36, Issue 8, 2004, Pages 955-958

  Valeev, Rishat G ^a   Deev, Andrew N ^a   Ruts, Yuri V ^a  

^a PHYSICOTECHNICAL INSTITUTE   (Russian Federation)

Author keywords

EXAFS; GaAs; Ge; Nanostructure; Thin films; X ray diffraction

Indexed keywords

CRYSTALLITES; EXAFS; FILM THICKNESS; NANOCRYSTALLINE FILMS;

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; GERMANIUM; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; VACUUM; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 4444295648     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1810     Document Type: Conference Paper

References (7)

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