EXAFS studies of the local atomic structure of nanocrystalline GaAs

Semiconductors

Volumn 35, Issue 6, 2001, Pages 627-629

  Valeev, R G ^a   Deev, A N ^a   Rutz, Yu V ^a   Babanov, Yu A ^b   Krylov, P N ^c   Kobziev, V F ^c   Lomaeva, S F ^a  

^a PHYSICOTECHNICAL INSTITUTE   (Russian Federation)

^b INSTITUTE OF METAL PHYSICS   (Russian Federation)

^c UDMURT STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035373883     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1379391     Document Type: Article

References (3)

1. M. G. Mil'vidskiǐ and V. V. Chaldyshev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 513 (1998) [Semiconductors 32, 457 (1998)].
2. S. I. Zabinsky, J. J. Rehr, A. Ankudinov, et al., Phys. Rev. B 52, 2995 (1995).
3. D. I. Kochubeǐ, Yu. A. Babanov, et al., X-ray Spectrum-Analysis Methods for Studying Amorphous Solid-State Structure: EXAFS-Spectroscopy (Nauka, Novosibirsk, 1988).