-
2
-
-
0033322838
-
A 77 GHz GaAs pHEMT transceiver MMIC for automotive sensor applications
-
IEEE
-
A. Tessmann, L. Verweyen, M. Neumann, H. Massler, W. H. Haydl, A. Hülsmann, and M. Schlechtweg, "A 77 GHz GaAs pHEMT Transceiver MMIC for Automotive Sensor Applications", Proceedings of the 1999 GaAs IC Symposium. IEEE, 1999, pp. 207-210.
-
(1999)
Proceedings of the 1999 GaAs IC Symposium
, pp. 207-210
-
-
Tessmann, A.1
Verweyen, L.2
Neumann, M.3
Massler, H.4
Haydl, W.H.5
Hülsmann, A.6
Schlechtweg, M.7
-
3
-
-
0034459575
-
Design and fabrication of 77 GHz HEMT mixer modules for automotive applications using experimentally optimized antipodal finline transitions
-
D.-W. Kim, S.-W. Paek, J.-H. Lee, K.-I. Jeon, C.-R. Lim, and K.-W. Chung, "Design and Fabrication of 77 GHz HEMT Mixer Modules for Automotive Applications using Experimentally Optimized Antipodal Finline Transitions", Proc. of Asia-Pacific Microwave Conference (APMC 2000), 2000, pp. 189-192.
-
(2000)
Proc. of Asia-Pacific Microwave Conference (APMC 2000)
, pp. 189-192
-
-
Kim, D.-W.1
Paek, S.-W.2
Lee, J.-H.3
Jeon, K.-I.4
Lim, C.-R.5
Chung, K.-W.6
-
4
-
-
0036067877
-
40 GHz monolithic integrated mixer in SiGe bipolar technology
-
IEEE
-
S. Hackl, J. Böck, M. Wurzer, and A. L. Scholtz, "40 GHz Monolithic Integrated Mixer in SiGe Bipolar Technology", IEEE MTT-S International Microwave Symposium Digest. IEEE, 2002, pp. 1241-1244.
-
(2002)
IEEE MTT-S International Microwave Symposium Digest
, pp. 1241-1244
-
-
Hackl, S.1
Böck, J.2
Wurzer, M.3
Scholtz, A.L.4
-
5
-
-
2442715211
-
60 GHz transceiver circuits in SiGe bipolar technology
-
2004 IEEE International Solid-State Circuits Conference
-
S. Reynolds, B. Floyd, U. Pfeiffer, and T. Zwick, "60 GHz Transceiver Circuits in SiGe Bipolar Technology", 2004 Digest of Technical Papers. 2004 IEEE International Solid-State Circuits Conference, 2004, pp. 442-443.
-
(2004)
2004 Digest of Technical Papers
, pp. 442-443
-
-
Reynolds, S.1
Floyd, B.2
Pfeiffer, U.3
Zwick, T.4
-
6
-
-
0033685296
-
A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends
-
IEEE
-
H. J. Siweris, A. Werthof, H. Tischer, T. Grave, H. Werthmann, R. H. Rasshofer, and W. Kellner, "A Mixed Si and GaAs Chip Set for Millimeter-Wave Automotive Radar Front-Ends", IEEE Radio Frequency Integrated Circuits Symposium. IEEE, 2000, pp. 191-194.
-
(2000)
IEEE Radio Frequency Integrated Circuits Symposium
, pp. 191-194
-
-
Siweris, H.J.1
Werthof, A.2
Tischer, H.3
Grave, T.4
Werthmann, H.5
Rasshofer, R.H.6
Kellner, W.7
-
8
-
-
0003951610
-
-
Artech House, Norwood, MA 02062, first edition
-
P. Vizmuller, RF Design Guide - Systems, Circuits, and Equations, Artech House, Norwood, MA 02062, first edition, 1995.
-
(1995)
RF Design Guide - Systems, Circuits, and Equations
-
-
Vizmuller, P.1
-
9
-
-
0003503403
-
-
Artech House, Norwood, MA 02062, first edition
-
Mongia, R., Bahl, I., and Bhartia, P., RF and Microwave Coupled-Line Circuits, Artech House, Norwood, MA 02062, first edition, 1999.
-
(1999)
RF and Microwave Coupled-line Circuits
-
-
Mongia, R.1
Bahl, I.2
Bhartia, P.3
-
10
-
-
1042289143
-
SiGe bipolar technology with 3.9 ps gate delay
-
September
-
T. F. Meister, H. Schäfer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, H. Knapp, M. Wurzer, A. Mitchell, T. Böttner, and J. Böck, "SiGe Bipolar Technology with 3.9 ps Gate Delay", Bipolar/BiCMOS Circuits and Technology Meeting, September 2003, pp. 103-106.
-
(2003)
Bipolar/BiCMOS Circuits and Technology Meeting
, pp. 103-106
-
-
Meister, T.F.1
Schäfer, H.2
Aufinger, K.3
Stengl, R.4
Boguth, S.5
Schreiter, R.6
Rest, M.7
Knapp, H.8
Wurzer, M.9
Mitchell, A.10
Böttner, T.11
Böck, J.12
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