Transmission line analysis of MRAM cell

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2089-2091

  Park, S ^a   Jo, S ^a  

^a Soongsil University   (South Korea)

Author keywords

Magnetic random access memory (MRAM); Model; S parameters; TMR; Transmission line

Indexed keywords

CAPACITANCE; CAPACITORS; COMPUTER SIMULATION; ELECTRIC INSULATORS; ELECTRIC LINES; FINITE ELEMENT METHOD; MAGNETORESISTANCE; PERMITTIVITY; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICES;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTION (MTJ); SIGNAL VOLTAGE; TRANSMISSION COEFFICIENT;

RANDOM ACCESS STORAGE;

EID: 4444268816     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.832112     Document Type: Article

References (5)

1. J. M. Rabaey, Digital Integrated Circuits, A Design Perspective. Englewood Cliffs, New Jersey: Prentice-Hall, 1996, pp. 471-493.
2. S. E. Russek, J. O. Oti, S. Kaka, and E. Y. Chen, "High-speed characterization on submicrometer giant magnetoresistive devices," J. Appl. Phys., vol. 85, pp. 4773-4775, Apr. 1999.
3. S. Park, Y. Choi, and S. Jo, "Junction capacitance dependence of response time for magnetic tunnel junction," J. Korean Magn. Soc., vol. 12, pp. 68-72, 2002.
4. B. N. Engel, N. D. Rizzo, J. Janesky, J. M. Slaughter, R. Dave, M. De-Herrera, M. Durlam, and S. Tehrani, "The science and technology of magnetoresistive tunneling memory," IEEE Trans. Nanotechnol., vol. 1, pp. 32-38, Mar. 2002.
5. T. Itoh and R. Mittra, "Spectral-domain approach for calculating the dispersion characteristics of microstrip lines," IEEE Trans. Microwave Theory Tech., vol. MTT-21, pp. 496-499, July 1973.