Carrier relaxation time divergence in single and double layer cuprates

European Physical Journal B

Volumn 36, Issue 3, 2003, Pages 327-334

  Schneider, M L ^a,l   Rast, S ^a   Onellion, M ^a   Demsar, J ^b   Taylor, A J ^b   Glinka, Y ^c   Tolk, N H ^c   Ren, Y H ^d   Lupke G ^d   Klimov, A ^e,f   Xu, Y ^f   Sobolewski, R ^e,f   Si, W ^g   Zeng, X H ^g   Soukiassian, A ^g   Xi, X X ^g   Abrecht, M ^h   Ariosa, D ^h   Pavuna, D ^h   Krapf, A ⁱ   Manzke, R ⁱ   Printz, J O ^j   Williamsen, M S ^m   Downum, K E ^j   Guptasarma, P ^j   Bozovic, I ^k   more..

^a University of Wisconsin Madison   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d The College of William and Mary   (United States)

^e INSTITUTE OF PHYSICS   (Poland)

^f University of Rochester   (United States)

^g PENNSYLVANIA STATE UNIVERSITY   (United States)

^h EPFL   (Switzerland)

ⁱ HUMBOLDT UNIVERSITY   (Germany)

^j UNIVERSITY OF WISCONSIN MILWAUKEE   (United States)

^k STANFORD UNIVERSITY   (United States)

^l NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^m NONE

more..

Author keywords

[No Author keywords available]

Indexed keywords

PHASE TRANSITIONS; RELAXATION PROCESSES; SINGLE CRYSTALS; STOICHIOMETRY; THERMAL EFFECTS; THIN FILMS;

CARRIER RELAXATION TIME; ONSET TEMPERATURE; POWER LAW DIVERGENCE; REFLECTIVITY MEASUREMENTS;

OXIDE SUPERCONDUCTORS;

EID: 4444223213     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1140/epjb/e2003-00351-8     Document Type: Article

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