Erratum: Dielectric constant reduction in silicon nanostructures (Physical Review B - Condensed Matter and Materials Physics (2008) 77, (115355))

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 20, 2008, Pages

  Yoo, Han G ^a   Fauchet, Philippe M ^a  

^a NONE

Author keywords

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Indexed keywords

EID: 44349150979     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.209903     Document Type: Erratum

References (5)

1. C. Delerue, M. Lannoo, and G. Allan, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.115411 68, 115411 (2003).
2. F. Giustino and A. Pasquarello, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.144104 71, 144104 (2005).
3. C. Delerue and G. Allan, Institut d'Electronique, de Microè lectronique et de Nanotechnologie, France (personal communication, 2008).
4. With T denoting the total slab thickness, the expression for Eq. 3 of our paper should have been 1 (T) = 1 Bulk - (1 Bulk - 1 Surface) 2 dSurface T, from which the expression for (T) can be obtained as, with use of geometric series, (T) Bulk - (Bulk - Surface) Bulk Surface 2 dSurface T. As stated in our paper, the two competing theories both exhibit (1Size) l dependence.
5. Accordingly, these revised values must be referenced in Fig. 5 of our paper.