p-type characteristics of ZnSe:Li3N grown by a closed Bridgman method

Current Applied Physics

Volumn 8, Issue 5, 2008, Pages 569-572

  Wang, J F ^a   Miyano, T ^a   Isshiki, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Doping; A2. Bridgman technique; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

CRYSTAL GROWTH FROM MELT; CURRENT VOLTAGE CHARACTERISTICS; LITHIUM COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

ACCEPTOR CONCENTRATION; CAPACITANCE VOLTAGE (CV) CHARACTERISTICS;

SINGLE CRYSTALS;

EID: 44149123347     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2007.10.003     Document Type: Article

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