Bridgman growth of twin-free ZnSe single crystals

Materials Science and Engineering: B

Volumn 83, Issue 1-3, 2001, Pages 185-191

  Wang, J F ^a   Omino, A ^b   Isshiki, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Etch pit density (EPD); Full width at half maximum (FWHM); Photoluminescence (PL); Twin free; Vertical Bridgman; ZnSe crystal

Indexed keywords

CRYSTAL GROWTH; ETCHING; EXCITONS; INTERFACES (MATERIALS); METAL MELTING; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STOICHIOMETRY; THERMAL GRADIENTS;

ETCH PIT DENSITY (EPD); FULL WIDTH AT HALF MAXIMUM (FWHM); VERTICAL BRIDGMAN METHOD; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035928004     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00512-8     Document Type: Article

References (21)