Enhancement of hot-carrier induced degradation under low gate voltage stress due to hydrogen for NMOSFETs with SiN films

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 307-311

  Tokitoh, S ^a   Uchida, H ^a   Shibusawa, K ^a   Murakami, N ^a   Nakamura, T ^a   Aoki, H ^a   Yamamoto, S ^a   Hirashita, N ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; DIELECTRIC FILMS; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; HOT CARRIERS; HYDROGEN; SILICON NITRIDE; SUBSTRATES; THERMAL STRESS;

SILICON NITRIDE FILMS;

MOSFET DEVICES;

EID: 0030704123     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)