Analysis of the FinFET parasitics for improved RF performances

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2007, Pages 37-38

  Parvais, B ^a   Dehan, M ^a   Subramanian, V ^b   Mercha, A ^c   Tamer San, K ^a   Jurczak, M ^a   Groeseneken, G ^b   Sansen, W ^b   Decoutere, S ^a  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PERFORMANCE GAIN; TECHNOLOGICAL SOLUTIONS;

GAIN CONTROL; INTEGRATED CIRCUIT LAYOUT;

FIELD EFFECT TRANSISTORS;

EID: 43549113791     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2007.4357841     Document Type: Conference Paper

References (4)

1. D. Lederer et al., IEEE SiRF 2006, pp. 8-11.
2. S. Nuttinek et al., IEEE Trans. Elec. Dev, Feb. 2007, pp. 279-283.
3. A. Kranti et al., IOP Semicond. Sci. and Technology, Mar 2007, pp. 481-491.
4. W. Wu et al., IEEE Trans. Elec. Dev., April 2007, pp. 692-698.